On the temperature dependence of the EBIC contrast of dislocations in silicon-Reference-Cited by-同舟云学术

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On the temperature dependence of the EBIC contrast of dislocations in silicon

Published:1986 Issue:2 Volume:47 Page:171-173
ISSN:0302-0738
Container-title:Journal de Physique
language:
Short-container-title:J. Phys. France

Author:

Donolato C.

Publisher

EDP Sciences

Link

http://jphys.journaldephysique.org/10.1051/jphys:01986004702017100/pdf

Reference8 articles.

1. Charge collection scanning electron microscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LIMITATIONS AND FURTHER DEVELOPMENT OF BEAM INJECTION METHODS. A SYNTHESIS;Le Journal de Physique IV;1991-12

2. EBIC contrast theory of dislocations : intrinsic recombination properties;Revue de Physique Appliquée;1990

3. The Conductive Mode;SEM Microcharacterization of Semiconductors;1989

4. Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Current;Point and Extended Defects in Semiconductors;1989

5. Surface matter transport phenomena studied in situ on crystal tips;Surface Science;1987-10

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