The development of MOCVD techniques for ferroelectric and dielectric thin film depositions-Reference-Cited by-同舟云学术

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The development of MOCVD techniques for ferroelectric and dielectric thin film depositions

Published:2001-08 Issue:PR3 Volume:11 Page:Pr3-1139-Pr3-1145
ISSN:1155-4339
Container-title:Le Journal de Physique IV
language:
Short-container-title:J. Phys. IV France

Author:

Li T.,Hsu S. T.

Publisher

EDP Sciences

Subject

General Physics and Astronomy

Link

http://jp4.journaldephysique.org/10.1051/jp4:20013143/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOCVD growth of barium–strontium titanate films using newly developed barium and strontium precursors;Thin Solid Films;2010-06

2. Novel Low Melting Point Barium and Strontium Precursors for the MOCVD Growth of Barium-Strontium-Titanate Films;Chemical Vapor Deposition;2009-12

3. Barium acylpyrazolonate derivatives stabilized by O- and N-donor ligands: synthesis, spectral and structural characterization;Inorganica Chimica Acta;2005-03

4. Key Integration Techniques and Issues for Silicon-Based Ferroelectric Devices;Integrated Ferroelectrics;2004-01

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