Structural and electrical characterization of n+-type ion-implanted 6H-SiC
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004112/pdf
Reference13 articles.
1. Activation of nitrogen implants in 6H-SiC
2. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
3. Ion Implantation and Annealing Effects in Silicon Carbide
4. Ion-implantation in bulk semi-insulating 4H–SiC
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples;Materials Science Forum;2013-01
2. The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H;Thin Solid Films;2010-05
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