Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2008066/pdf
Reference22 articles.
1. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
2. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
3. S.J. Spiegel, D. Ritter, R.A. Hamm, A. Feygenson, P.R. Smith. Trans. Electron Devices42(1995)
4. Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
5. A peeling algorithm for extraction of the HBT small-signal equivalent circuit
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on $S$-Parameters Measured at Normal Bias Conditions;IEEE Transactions on Microwave Theory and Techniques;2011-08
2. Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base;Solid-State Electronics;2010-01
3. An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters;Solid-State Electronics;2008-11
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