Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004091/pdf
Reference17 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Material defects in 4H-silicon carbide diodes
3. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
4. Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts
5. Performance limiting surface defects in SiC epitaxial p-n junction diodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging;Microscopy and Microanalysis;2021-01-29
2. 4H-SiC band structure investigated by surface photovoltage spectroscopy;Acta Materialia;2012-05
3. Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC;Journal of Applied Physics;2010-07
4. On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC();Applied Surface Science;2009-04
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