Author:
Galadi A.,Morancho F.,Benhida K.,Hassani M. M.
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. B.J. Baliga,Modern power devices(J. Willey & Sons, 1992)
2. N. Cézac, F. Morancho, P. Rossel, H. Tranduc, A. Peyre-Lavigne, A new generation of power unipolar devices: the concept of the FLoating Islands MOS Transistor (FLIMOST),Proceedings ISPSD'2000, Toulouse, 69
3. A novel high-voltage sustaining structure with buried oppositely doped regions
4. W. Saitoh, I. Omura, K. Tokano, T. Ogura, H. Ohashi, Ultra low On-resistance SBD with P-buried floating layer,Proc. ISPSD'02, Santa Fe, p. 33 2002
5. Theory of Semiconductor Superjunction Devices