Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour-Reference-Cited by-同舟云学术

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Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour

Published:2002-11-29 Issue:1 Volume:23 Page:11-18
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. AP

Author:

Shiryaev A.,van Veen A.,Rivera A.,van Huis M.,Bus T.,Arnoldbik W. M.,Tomozeiu N.,Habraken F. H. P. M.,Delamare R.,Ntsoenzok E.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap:2002116/pdf

Reference31 articles.

1. Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide

2. Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC

3. J.F. Ziegler, J.P. Biersack, U. Littmark,The Stopping and Range of Ions in Solids(Pergamon Press, New York, 1999)

4. Clustering of krypton in tungsten observed by helium desorption spectrometry

5. Elastic recoil detection

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1. On the interaction of molecular hydrogen with diamonds: An experimental study using nuclear probes and thermal desorption;Diamond and Related Materials;2007-08

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