Extended generation profile - E.B.I.C model application in the case of a PN junction
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap:2000198/pdf
Reference16 articles.
1. Extended Generation Profile - E.B.I.C. Model
2. Injected Current Carrier Transport in a Semi‐Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities
3. Cathodoluminescence at p‐n Junctions in GaAs
4. Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron Microscope
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