Inverted-heterostructure based device of CH3NH3PbBr3 for Schottky photodiode

Abstract

In this paper, we have presented a device {FTO (Fluorine-doped tin Oxide)/TiO2/hybrid perovskite/Spiro-OMeTAD/Al} of photoconductive material CH3NH3PbBr3 for the photovoltaic applications. TiO2 has been used as an electron transport layer, which plays the vital role of extracting electrons, transporting electrons, blocking holes and also aligned the perfect energy match with CH3NH3PbBr3. The current–voltage (I–V) characteristics of the fabricated device have been analyzed to evaluate the various diode parameters and understand the charge transport properties. We have analyzed of space charge limited conduction (SCLC) region to evaluate the charge carrier mobility and the calculated value was 1.59 × 10−4 cm2 V−1 s−1. The mobility of carrier may also be extract by I–V characteristics with 0–10 V (charge transport graph). The current level in the device increases considerably under light excitation. Furthermore, impedance spectroscopy analysis has been performed to identify the internal circuit parameters of the photoconductive device.