Author:
Barna Imre Ferenc,Pocsai Mihály Anrás,Varró Sándor
Abstract
This work presents an analytic angular differential cross section formula for the electromagnetic radiation field-assisted electron scattering on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described with the well-known Volkov wave function, which has been used to describe strong laser field matter interaction for more than half a century, which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with 1011 W/cm2 < I < 1013 W/cm2 intensity.
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
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