Toward SiC-JFETs modelling with temperature dependence-Reference-Cited by-同舟云学术

Toward SiC-JFETs modelling with temperature dependence

Published:2010-10-06 Issue:2 Volume:52 Page:20301
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Ben Salah T.,Morel H.,Mtimet S.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap/2010139/pdf

Reference13 articles.

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2. L.D. Marlino, High temperature and thermal management needs for the freedomcar program, inProc. of High Temperature Electronics Conf. Conf. (HiTEC), Santa Fe, NM, 2006, p. 1

3. E. Kolawa, M. Mojarradi, T. Balint, Applications of high temperature electronics in space exploration, inProc. of High Temperature Electronics Conf. (HiTEC), Santa Fe, NM, 2006, p. 1

4. SiC-VJFETs power switching devices: an improved model and parameter optimization technique

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