Effect of point defects on lattice constant in MgO thin film deposited on silicon(0 0 1) substrate-Reference-Cited by-同舟云学术

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Effect of point defects on lattice constant in MgO thin film deposited on silicon(0 0 1) substrate

Published:2012-04 Issue:1 Volume:58 Page:10302
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Kaneko S.,Nagano T.,Ito T.,Yasui M.,Ozawa T.,Soga M.,Motoizumi Y.,Funakubo H.,Yoshimoto M.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://epjap.epj.org/10.1051/epjap/2012110247/pdf

Reference17 articles.

1. Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition

2. Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

3. Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy

4. Growing BaTiO3 thin films on Si(100) with MgO-buffer layers by sputtering

5. Preparation and Characterization of BaTiO3 Thin Films on MgO-buffered Si(100) Substrates by RF Sputtering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of oxygen contents on the physical properties of MgO films and carrier transport of Au/MgO/ZnO MIS diodes;Ceramics International;2023-09

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