Currents conversion in the submicron CDW-N-CDW structures

Abstract

Using selective area irradiation by electrons with high energies the submicron CDW-N -CDW heterostructures were obtained on NbSe, single crystals. In sliding CDW regime an excess voltage appears on this narrow normal region that depends neither on a sample, nor on the length of the irradiated area l and represents threshold phase slip (PS) voltage Vps, induced on CW-N boundaries. The obtained Vps, data for lower CDW strongly differ (5-6 times higher) from the known results for NbSe, obtained in the conventional configuration. This suggests that CDW-N boundaries created by irradiation represent the "ideal" face contacts introducing small perturbations. At low temperature (T<7 K) and at l<0.5 μm we observe narrow (-0.5 mV width) dynamic conductance peak at zero bias voltage. The peak amplitude grows with decreasing temperature and length of the irradiated area.