Author:
Ribate Mohamed,Mandry Rachid,Elabdellaoui Larbi,Aytouna Fouad,Benbrahim Mohammed
Abstract
This work reveals the design for broadband high-power high-efficiency GaN HEMT power amplifier, operating in the frequency band ranging from 2.15 GHz to 2.65 GHz. The proposed structure is implemented using Cree GaN HEMT CGH40010 transistor. The high-power and high-efficiency performances over the broadband bandwidth are achieved using the load-pull technique. The proposed power amplifier is unconditionally stable over the entire operating frequency band. With the neatly designed matching circuits, the introduced power amplifier shows an excellent input/output matching. The simulated results show a flat power gain of 15 dB with an output 1-dB compression point of 14 dB. In terms of largesignal performance, the proposed amplifier reaches a saturated output power of 41.3 dBm (~13.6 Watts) with a PAE of 64% and a drain efficiency of 72%. The proposed design achieves an excellent linearity with an output third order two-tone intercept point TOI of 48 dBm.
Reference21 articles.
1. Yeom K.W, Microwave Circuit Design A Practical Approach Using ADS, Prentice Hall, Pearson Education Inc., (2015)
2. A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications
3. Cripps S. C., Advanced Techniques in RF Power Amplifiers Design. Norwood, MA: Artech House, (2002)
4. Dellier S., Dehaene T. and Peragin E., GaN highefficiency S-band power amplifier with power flexibility from 1 to 10 watts, 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), pp. 28-30, (2014)
5. Poole C., Darwazeh I., Microwave Active Circuit Analysis and Design, Academic Press, (2016)