Experimental study silicon low-dimensional structures for generation of THz radiation

Abstract

Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.