Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
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Publisher
EDP Sciences
Link
http://epjwoc.epj.org/10.1051/epjconf/201713302001/pdf
Reference8 articles.
1. Rogalski A., Infrared detectors, New York: CRC Press, Taylor & Francis Group, 2011
2. The kinetics and amplitude characteristics of the small field effect at semiconductor surfaces during steady state illumination
3. Influence of illumination on MIS capacitances in the strong inversion region
4. Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy
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