Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures
Author:
Publisher
EDP Sciences
Link
http://www.epj-conferences.org/10.1051/epjconf/201713202006/pdf
Reference11 articles.
1. Dependence of photoluminescence from β-FeSi2 and induced deep levels in Si on the size of β-FeSi2 balls embedded in Si crystals
2. Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
3. Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
4. Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties
5. Growth, structure and luminescence properties of multilayer Si/β-FeSi2NCs/Si/…/Si nanoheterostructures
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