Tunnel Magnetoresistive Effect in Nanostructured Composite Systems

Abstract

The results of the investigation of tunnel magnetoresistive effect in a large number of metal-dielectric nanocomposites obtained by the same technology and under identical conditions are presented. The composites with multi-elemental amorphous metal phase were considered. It has been shown that the large values of the tunnel magnetoresistive effect in these composites are ensured when the value of the density of electronic states on the Fermi surface is large while other conditions are being equal. The conditions for the appearance of an anomalous positive tunneling magnetoresistance are formulated based on the study of composites with a mono-elemental ferromagnetic phase from cobalt.