Author:
Crossay Alexandre,Cammilleri Davide,Thomere Angelica,Zerbo Bienlo,Rebai Amelle,Barreau Nicolas,Lincot Daniel
Abstract
A method was developed for the electrodeposition of Cu-In-Ga precursor layers to elaborate Cu(In,Ga)(S,Se)2 (CIGS) thin films on silicon substrates for future application as silicon/wide-gap CIGS tandem solar cells. An underlayer of Ag was first deposited on silicon substrates to ensure a good adhesion of the electrodeposited stack and to serve as cathode during the deposition process. Cu, In and Ga layers were then sequentially electrodeposited. Ag-Cu-In-Ga precursor layers were finally subjected to elemental sulfur annealing at 600 °C. Formation of compact and adherent AgCIGS is observed. X ray diffraction and photoluminescence analyses confirm the formation of wide-gap CIGS of about 1.6 eV, with a spontaneous gallium grading over the depth of the sample leading to the formation of a bi-layer structure with a gallium rich layer at the interface with silicon.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
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