Couches minces d'oxynitrure de phosphore. Application aux structures MIS sur InP
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Publisher
EDP Sciences
Link
http://rphysap.journaldephysique.org/10.1051/rphysap:01989002405054500/pdf
Reference20 articles.
1. n-channel inversion-mode InP m.i.s.f.e.t.
2. Channel mobility enhancement in InP metal‐insulator‐semiconductor field‐effect transistors
3. Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
4. Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
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