The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma
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EDP Sciences
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http://rphysap.journaldephysique.org/10.1051/rphysap:019780013012070100/pdf
Reference7 articles.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of reactive ion etching of glass and its applications in integrated optics;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-09
2. Effects of ion bombardment and chemical reaction on wafer temperature during plasma etching;Journal of Applied Physics;1990-04-15
3. Determination of the power and current densities in argon and oxygen plasmas by in situ temperature measurements;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-03
4. Temperature and flow effects in aluminum etching using bromine-containing plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-01
5. Subtractive Etching;Semiconductor Lithography;1988
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