Characterization of undoped high resistivity CdTe grown by a THM method
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Publisher
EDP Sciences
Link
http://rphysap.journaldephysique.org/10.1051/rphysap:01977001202018500/pdf
Reference13 articles.
1. Undoped high‐resistivity cadmium telluride for nuclear radiation detectors
2. The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphide
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1. Heavy metal doping of CdTe crystals;IEEE Transactions on Nuclear Science;2004-12
2. A new method for evaluation of transport properties in CdTe and CZT detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-06
3. Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices;Semiconductor Science and Technology;1997-05-01
4. About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride;Physica Status Solidi (a);1987-03-16
5. Experimental investigations and numerical integration of the thermally stimulated current rate equations for defect parameters in CdTe crystals;Journal of Applied Physics;1987-03-15
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