Influence de la chimisorption sur le courant d'obscurité du CdS de résistivité élevée-Reference-Cited by-同舟云学术

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Influence de la chimisorption sur le courant d'obscurité du CdS de résistivité élevée

Published:1970 Issue:2 Volume:5 Page:321-326
ISSN:0035-1687
Container-title:Revue de Physique Appliquée
language:
Short-container-title:Rev. Phys. Appl. (Paris)

Author:

Ravelet S.,Palz W.

Publisher

EDP Sciences

Link

http://rphysap.journaldephysique.org/10.1051/rphysap:0197000502032100/pdf

Reference35 articles.

1. Failure mechanisms in thin film field effect transistors

2. Surface photovoltage measurements in vapour-deposited CdS

3. Thin film CdS-CdTe heterojunction diodes

4. The Effect of Various Optical Radiations and Water Vapor on the Trapping Spectrum of CdS

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic behaviour of oxygen radicals in CdS;physica status solidi (a);1982-05-16

2. The effects of adsorbed oxygen and hydrogen on the electrical properties of high purity cadmium sulphide films;Thin Solid Films;1974-01

3. The processes occurring in the surface region of CdS single crystals under electron bombardment, photoexcitation, and gas adsorption and their role in the 80 °K-exciton photoluminescence;Journal of Luminescence;1973-04

4. Progress in electrophotography in Western Europe;IEEE Transactions on Electron Devices;1972-04

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