Théorie et observations de la croissance hélicoïdale sur les faces c(0001) de carbure de silicium-Reference-Cited by-同舟云学术

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Théorie et observations de la croissance hélicoïdale sur les faces c(0001) de carbure de silicium

Published:1951 Issue: Volume:48 Page:475-484
ISSN:0021-7689
Container-title:Journal de Chimie Physique
language:
Short-container-title:J. Chim. Phys.

Author:

Amelinckx S.

Publisher

EDP Sciences

Subject

Biochemistry

Link

http://jcp.edpsciences.org/10.1051/jcp/1951480475/pdf

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth mechanism and surface defects in the {210} form in pyrite crystals;Physics and Chemistry of Minerals;1987-10

2. An optical and X-ray topographic study of giant screw dislocations in silicon carbide;Journal of Crystal Growth;1985-01

3. Contribution of the ionic bonding to the thermal stability of SiC polytypes;Materials Research Bulletin;1979-09

4. Polytypism and Stacking Faults in Crystals with Layer Structure;Crystallography and Crystal Chemistry of Materials with Layered Structures;1976

5. A review of the structure of silicon carbide;Acta Crystallographica Section B Structural Crystallography and Crystal Chemistry;1969-03-01

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