Abstract
In this work, we investigate, by μ-Raman spectroscopy the distribution of stress field on a micro-machined structures. They were realized on a 3C-SiC substrate, grown on a Silicon On Insulator (SOI) wafer, after lithography and etching processes. Various structures, such as strain gauge, single and double clamped beams, were analyzed, showing different stress distributions. All the structures show an intense variation of stress close to the undercut region.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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