Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

Abstract

In this paper, a suitable process technology is employed to fabricate a new open gate silicon carbide-based junction field-effect transistor (OG-4H-SiC-JFET) intended to be used for all types of biochemical sensing applications. The main focus is dedicated to the fabrication steps and specifically the plasma etching of the SiC as it is the key step to pattern the device components. All necessary I-V characteristics (IDS-VDS and IDS-VGS) have been derived and show acceptable electrical performance. Furthermore, the electrical characteristics of the OG-4H-SiC JFET were simulated using 3D Silvaco ATLAS and are in line with the experimental electrical characteristics. The efficacity and simplicity of the process described in this paper is the first step for future development of biochemical sensors based on SiC-FETs.