Influence of Acceptor Incomplete Ionization in p<sup>+</sup> Emitter on SiC LTT with n-Type Blocking Base-Reference-Cited by-同舟云学术

Influence of Acceptor Incomplete Ionization in p<sup>+</sup> Emitter on SiC LTT with n-Type Blocking Base

Published:2023-07-31 Issue: Volume:950 Page:149-154
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Wang Xi¹,Qiu Ming Xuan¹,Pu Hong Bin¹,Zhang Yu Xi²,Xu Jian Ning¹,Wan Hang Qi³,Wang Zhao Yang³

Affiliation:

1. Xi’an University of Technology

2. Xi’an TianGuang Semiconductor Co., Ltd

3. Xi’an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion

Abstract

Influence of acceptor incomplete ionization in p+ emitter on characteristics of SiC LTT with n-type blocking base was investigated in this work through TCAD simulation. The incomplete ionization model in the p+ emitter was shielded for comparison of the influence of acceptor complete ionization status. The minimum triggering intensity, forward on-state voltage drop, turn-on delay time and anode voltage falling time were simulated and discussed. The simulation results indicated that the acceptor incomplete ionization in p+ emitter makes the minimum triggering intensity, forward on-state voltage drop, switch-on delay time and anode voltage falling time increase by about 3.0 times, 1.24 times, 22% and 2.55 times, respectively.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.950.149.pdf

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