Affiliation:
1. NASA Glenn Research Center
2. NASA Glenn
Abstract
This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 × 1018 ± 4 × 1018 cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.
Publisher
Trans Tech Publications, Ltd.