Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment

Abstract

Dislocation behaviors after post-growth thermal treatment were investigated by X-ray topography and KOH etching. Generation of prismatic dislocations were observed in X-ray topography, and density of basal plane dislocations (BPDs) increases with annealing temperature and radial temperature gradient. Distribution of newly generated BPDs in the wafer after thermal treatment is correlated to the resolved shear stress arising from radial temperature gradient.