Affiliation:
1. University of Patras
2. University of Texas at Arlington
Abstract
Thin Mo films in the thickness range between 1 and 164 nm have been deposited on high-quality quartz and Corning glass substrates by Radio Frequency (RF) magnetron sputtering under high vacuum (base pressure ~ 3 × 10-7 mbar). The sputtering target was metallic Mo. Subsequent short annealing of Mo at temperatures between about 400 °C - 600 °C in a muffle furnace in air produced MoO3 thin films. Heating even to 400°C resulted in significant growth of crystal size. Surprisingly, films thinner than about 50 nm could not be heated at higher temperatures due to the evaporation of the oxide. Ultraviolet – visible light absorption spectroscopy experiments were employed for the determination of the optical band gap. The results for direct and indirect allowed transitions are discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
General Chemical Engineering
Cited by
1 articles.
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