Plasma Oxidation of Patterned Mo Nanowires for Precise and Uniform Dry Etching

Author:

Erofeev Ivan1,Khan Muhaimin Mareum1,Aabdin Zainul2,Chowdhuri Angshuman Ray1,Pacco Antoine3ORCID,Philipsen Harold3,Holsteyns Frank3,Mirsaidov Utkur1

Affiliation:

1. National University of Singapore

2. Agency for Science, Technology and Research (A*STAR)

3. IMEC VZW

Abstract

We demonstrate that a uniform recess of polycrystalline Mo can be achieved using a two-step method: metal oxidation with isotropic oxygen plasma that forms a layer of MoO3 and selective etching of this oxide layer. The oxidation step fully defines the recess depth, and its uniformity is ensured by the low facet dependence of plasma oxidation. We have extensively studied the oxidation of patterned Mo nanowires (30 nm width) in isotropic oxygen plasma and achieved uniform oxide layers of predefined thickness by controlling radio-frequency (RF) power, gas pressure, and exposure time. We showed that using highly selective oxide etching, we can perform multiple etching cycles with a typical etch rate of 1-2 nm per cycle, depending on the RF power. Due to plasma isotropy, this approach can be implemented for a controlled uniform etching of large vertical stacks of metal nanostructures.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

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