Affiliation:
1. Chemnitz University of Technology
2. Infineon Technologies AG
Abstract
The aim of this work is to investigate the 3rd quadrant safe operating area (SOA) of different voltage class SiC MOSFETs under surge current conditions depending on the gate-source voltage. The extent to which an applied gate-source voltage can influence the surge current capability was investigated. For 650 V and 1.2 kV voltage class devices, surge current capability was higher with channel-on mode. However, this behavior was vice-versa for 2 kV and 3.3 kV devices. In this investigation, during the surge current event, the gate-source voltage was switched between different values to optimize the resulting voltage drop. This method can reduce power dissipation during a surge current event, especially for high voltage class SiC MOSFETs.
Publisher
Trans Tech Publications, Ltd.
Reference6 articles.
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