Study of the Electronic Defect States of One-Dimensional Comb-like Quantum Wires Structure with Resonator Defect by Using the Transfer Matrix Method

Abstract

In this paper using the transfer matrix method (TMM), we consider an electronic comb-like waveguides system composed by the periodicity of segment semiconductor (GaAs type) of length and grafted in its extremity by one semiconductor resonator (GaAlAs type) of length . These segments and resonators are considered quantum wires. The perfect system in question presents the electronic pass bands and electronic band gaps which allow to control and manipulate the electrons waves whose energy is identical to the energy of the gaps. We insert the defect at the resonator level in the middle of this system in question. Hence, very narrow localized defect states are created in the electronic band gaps, with probably high transmission rate and very important quality factor. These localized defect states shift to low energy by increasing the resonator defect length, while is move to high energy when the resonator defect concentration increases. In this study, we consider that the segments and resonators lengths are very small in front of their sections, so that the propagation of electronic waves occurs only in a single dimension.