Affiliation:
1. Korea Electrotechnology Research Institute (KERI)
2. Andong National University
Abstract
In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes. The results demonstrate that the threshold voltage (Vth) of the irradiated devices shifted towards negative values due to the radiation-induced positive oxide trapped charges. Moreover, this negative shift in Vth and positive trapped charges of field limiting ring (FLR) oxide led to an increase in output currents and a reduction in the breakdown voltage values.
Publisher
Trans Tech Publications, Ltd.
Reference5 articles.
1. A. Mihaila, L. Knoll, E. Bianda, M. Bellini, S. Wirths, G. Alfieri, L. Kranz, F. Canales and M. Rahimo, 2018 IEEE International Electron Devices Meeting (San Francisco, CA, USA, 2018) p.19.2.1-19.2.4.
2. A. R. Powell and L. B. Rowland, Proceedings of the IEEE 90, (2002) 942.
3. Q. Yu, W. Ali, S. Cao, H. Wang, H. Lv, Y. Sun, R. Mo, Q. Wang, B. Mei, J. Sun, H. Zhang, M. Tang, S. Bai, T. Zhang, Y. Bai and C. Zhang, IEEE Transactions on Nuclear Science 69, (2022) 1127.
4. Korea Electrotechnology Research Institute (www.keri.re.kr), SK powertech (www.ypt.co.kr).
5. D. Hu, J. Zhang, Y. Jia, Y. Wu, L. Peng and Y. Tang, IEEE Transactions on Electron Devices 65, (2018) 3719.