Effect of Annealing Temperature Variation on Al-Doped Nickel Oxide Thin-Film Synthesized by Dip-Coating Technique

Abstract

Aluminum-doped NiO thin films were generated on glass substrates by dip coating at different temperatures (400 to 500 °C) using 0.05 M of the precursor nickel acetate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate the structural and morphological aspects of the films. UV-visible spectroscopy was utilized to assess the optical properties of the films, and the energy band gap was confirmed to be 3.42,3.6, and 3.8 eV for as-prepared and thin films, respectively. Photoluminescence (PL) measurements were used to investigate electronic faults. The XRD lines of the transferred Al-doped NiO were strengthened due to the fact the film's temperature content increased due to the improved crystalline structure. This research article focuses on the optical properties and morphologies of thin films which have been deposited. Crystalline proportions of the thin films that were deposited were determined using the Debye-Scherer formula. The outcomes were computed after taking measurements of absorbance (A), transmittance and Band Gap.