Abstract
With the capability to switch at high speed, there are important concerns about Parasitic Turn-On (PTO) when using SiC MOSFETs in switching applications with fundamental half-bridge configuration [1]. In this work, we present 1200V SiC planar MOSFETs with low specific ON-resistance (Rsp), fast switching characteristics and high immunity to PTO. The PTO immunity is verified by experimental comparison to several commercially available SiC MOSFETs.
Publisher
Trans Tech Publications, Ltd.
Reference5 articles.
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