Electrophysical Properties of <i>N</i>-Cuinse Based Heterostructures

Abstract

By the method of thermal oxidation of n-type CuInSe2 crystals, n - n+ structures with a maximum absolute current photosensitivity of up to 10 mA / W were obtained at low rectification and no-load photovoltage. The used modes of thermal oxidation led to the formation of n-type layers on the surface of the n-CuInSe2 plates, the resistivity of which is 2-2.5 times higher concerning the initial substance. Measurements of the stationary current-voltage characteristics have shown that the structures obtained have a slight rectification K. All the structures obtained exhibit photosensitivity, which dominates when illuminated from the side of the layer in the spectral region of about 1 eV. The optimization of the process can reveal the technological possibilities of a significant improvement in the rectifying properties of isotypic structures based on CuInSe2.