Effects of Oxygen Vacancy and Al-Ag doping on Electrical Properties of ZnO Resistance Valve

Abstract

In order to analyze the influence of Al-Ag doping on the electrical properties of eigenstate and oxygen vacancy ZnO resistor valves, first principles were used to analyze the crystal structure of Al-Ag single doping and co-doping eigenstate and oxygen vacancy ZnO. Energy, band structure, density of states and electrical conductivity have been calculated. The results show that after doping with acceptor elements, the lattice parameters of the eigenstate unit cell and the oxygen vacancy unit cell are increased, and their potential can be increased. Gradient; when Ag is doped, its formation energy is the lowest, indicating that Ag doping is easier and higher stability; when oxygen vacancies, the nonlinear characteristic of ZnO resistor valve is better than that of eigenstate, but whether it is single doping or Co-doping does not improve its nonlinear characteristics better; doping will slightly increase its conductivity, and the conductivity of Ag doping is the best.