Affiliation:
1. Instituto Politécnico Nacional
Abstract
The present work reviews the results of the photoluminescence (PL) study of silver-doped ZnO nanostructures synthesized by both physical and chemical methods. ZnO is a semiconductor with a binding energy of 60 meV, which ensures efficient near-band-edge band emission at a temperature of 300K and ultraviolet emission of bulk ZnO, and ZnO has a bandgap energy of 3.37 eV at room temperature. By tuning the growth process parameters of silver-doped ZnO nanostructures, the optical properties of ZnO can be controlled for use in various optoelectronic components, biosensors, blue-emitting diodes, and even white light sensors.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science