Gain in Thermoelectric Figure of Merit of Al_xGa_1-xAs/GaAs Type Superlattices Induced by Strong Impurity Screening

Abstract

In multi-layer structures impurity scattering is effectively reduced by the modulation doping in order to achieve high charge carrier mobility and, as a consequence, better device performance. In this paper, the thermoelectric properties of superlattices when electrons are scattered by strongly screened ionized impurities are discussed. In low-temperature and strong screening circumstances, dependence of the thermopower, power factor, and figure of merit on the superlattice period, miniband width, and screening radius is found. For the specified superlattice parameters and ionized impurity concentration, the figure of merit reaches the value of 2.6. The thermopower of the superlattices five times exceeds that of bulk samples.