Fabrication of Highly Conducting Ag₂S Thin Films on FTO Substrate by Using SILAR

Abstract

Highly conducting Ag2S thin films were synthesized on FTO substrates at room temperature using simple and versatile successive ionic layer adsorption and reaction (SILAR) method. SILAR method was used to deposit silver sulfide (Ag2S) thin films of about 299 nm thickness, under optimized deposition conditions viz. SILAR cycles (50), immersion time (25 s), and rinsing time (15 s). X-ray diffraction (XRD) study indicates the formation of polycrystalline Ag2S with preferential orientation along (1 0 0) plane. Field emmission scanning electron microscopy (FESEM) will be used for study of the surface morphology of materials synthesized in thin film form. FESEM images showed that the deposited Ag2S thin films were homogenous, without cracks and with dense surface morphology covering entire substrate surface area. Compositional analysis showed that the Ag2S thin film becomes sulphur deficient and silver richer. Electrical studies showed that the deposited Ag2S films are highly conducting and can be used in photosensor and/or optoelectronic devices.