Affiliation:
1. TU Wien
2. Infineon Technologies AG
Abstract
We show the superior threshold voltage Vth and on resistance Ron stability of a SiC DMOStechnology at bipolar gate-drive operation. Therefore, the defect parameters of a two-state non-radiativemulti-phonon model to capture the charge trapping kinetics of oxide and interface defects is calibratedwithin our simulation framework Comphy by data extracted from measure-stress-measure (MSM) se-quences. An extrapolation of the device degradation at operating conditions renders bias temperatureinstabilities (BTI) a minor threat to on-state loss increase.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science