Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique

Abstract

Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant.