Enhanced Dielectric Properties of Ba<sub>0.85</sub>Sr<sub>0.15</sub>TiO<sub>3</sub> Ceramic by 8% Zirconium Doping

Author:

Ku Muhsen Ku Noor Dhaniah1,Nasir Nadia Nasika1,Osman Rozana Aina Maulat1,Idris Mohd Sobri2ORCID,Muhammad Nadzri Nur Izzati2,Ruiz León Domingo Arturo3

Affiliation:

1. Universiti Malaysia Perlis

2. Universiti Malaysia Perlis (UniMAP)

3. Universidad de Santiago de Chile

Abstract

The dielectric properties and crystal structure of Ba0.85Sr0.15TiO3 and Ba0.85Sr0.15Ti0.92Zr0.08O3 ceramics were studied. The samples were synthesized by using solid-state method. The results show that the samples were single phase. The Ba0.85Sr0.15TiO3 exhibited tetragonal structure (space group P4mm), while with addition of 8 mol% Zr into Ba0.85Sr0.15TiO3 it shows that the sample exhibited orthorhombic structure (space group Amm2). The dielectric constant value increased from 1094 for pure, up to 4211 for Ba0.85Sr0.15Ti0.92Zr0.08O3 ceramic at Tc measured at 1 kHz. The Tc decreased from 80 °C down to 60 °C as 8 mol% Zr ions doped into Ba0.85Sr0.15TiO3 composition. The Ba0.85Sr0.15Ti0.92Zr0.08O3 ceramic exhibited lower dielectric loss, tan δ about 0.006 compared to Ba0.85Sr0.15TiO3 ceramic (tan δ = 0.009) when measured at 110 °C with frequency 1 kHz. The slope at low frequency region in capacitance vs frequency plot for both samples attributed by the grain boundary effect, whereas the high frequency plateau associated with the bulk response. The impedance spectroscopy analysis results show that both samples are dominated by the bulk response when an incomplete semicircle arc was observed in Zʺ vs Zʹ plot.

Publisher

Trans Tech Publications Ltd

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3