Abstract
In this study, we investigated how bar-shaped 1SSF (Single Shockley-type stacking fault) in a chip of a SiC (Silicon Carbide) epitaxial wafer expanded with UV (ultraviolet) irradiation and observed it with PL (Photoluminescence) imaging and demonstrated early detection of bar-shaped 1SSF with an algorithm for automatic detection for the initial shape of bar-shaped 1SSF. Furthermore, we estimated that it was 83% how much UV irradiation time could be reduced.
Publisher
Trans Tech Publications, Ltd.