Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics

Abstract

In this paper, we propose a novel 1200V SiC MOSFET featuring the embedded junction-controlled-diode (JCD-MOSFET) and demonstrate its static and dynamic characteristics through TCAD simulations. Without sacrificing blocking and conduction performance, the adoption of JCD can effectively reduce knee voltage to 1.7V based on unipolar carrier conduction mode. Due to the reduced peak reverse recovery current and reverse recovery charge, the JCD-MOSFET achieves 30.8% lower turn-on losses than conventional MOSFET. Meanwhile, the fabrication process for the JCD-MOSFET is the same as conventional MOSFET without an extra mask. This proposed JCD-MOSFET prototype shows great potential in target applications in the near future.