Observation of Vacancies during Zn Diffusion in GaP
Author:
Affiliation:
1. Martin-Luther-Universität Halle-Wittenberg
2. Univ. Halle
3. Westfälische Wilhelms-Universität Münster
4. Universität Bonn
5. Chalmers University of Technology
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.445-446.26.pdf
Reference13 articles.
1. N.A. Stolwijk, G. Bösker, and J. Pöpping: Defect and Diffusion Forum 194-199 (2001), p.687.
2. J. Pöpping, N.A. Stolwijk, U. Södervall, C. Jäger, and W. Jäger: Physica B 308-310 (2001), p.895.
3. N.A. Stolwijk and J. Pöpping: Materials Science in Semiconductor Processing (2003) in press.
4. R. Krause-Rehberg and H.S. Leipner: Positron annihilation in semiconductors, (Springer-Verlag, Berlin 1999).
5. J. Gebauer, R. Krause-Rehberg, S. Eichler, and F. Börner: Appl. Surf. Sci. 149 (1999), p.110.
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1. Identification of As-vacancy complexes in Zn-diffused GaAs;Journal of Applied Physics;2013-03-07
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