Ferroelectric Properties of Lead-Free (Bi,La)4Ti3O12 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device-Reference-Cited by-同舟云学术

Ferroelectric Properties of Lead-Free (Bi,La)₄Ti₃O₁₂ Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device

Published:2005-06 Issue: Volume:486-487 Page:285-288
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Cho K.W.¹,Kim N.K.²,Oh S.H.²,Choi E.S.²,Sun H.J.²,Yeom S.J.²,Lee K.N.²,Lee Seoung Soo³,Hong Suk Kyoung²,Choi S.K.⁴,Hong Tae Whan¹,Kim Il Ho,Lee J.I.,Ur Soon Chul¹,Lee Young Geun¹,Ryu Sung Lim¹,Kweon Soon Young¹

Affiliation:

1. Chungju National University

2. Hynix Semiconductor Inc.

3. Changwon National University

4. Korea Advanced Institute of Science and Technology (KAIST)

Abstract

Ferroelectric properties of Pb-free (Bi,La)4Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12, which was analyzed by ICP-MS method. The switchable polarization obtained in a 100nm-thick BLT film was about 20 uC/cm2 at the 3 V applied voltage, and the optimized BLT film showed little fatigue loss about 10% up to 1×1011 cycles. The imprint properties of the BLT film were also characterized at 25 °C and 90 °C operating temperature after 125 °C data storage. Regardless of operating temperature, switchable polarization of BLT had a sufficiently large margin for device operation up to 10 years.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.486-487.285.pdf

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5. ) Fig. 5. Fatigue properties of NB-BLT thin films at various thicknesses.

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