In Situ HREM Studies of Grain Boundary Formation during Solidification of B-Doped Silicon

Abstract

In situ high-resolution transmission electron microscopy experiments were applied to examine the nano-scale solidification process of boron-doped silicon from the liquid state. Fine particles of the specimen were first heated up to the melting temperature using a TEM heating-holder, and then gradually cooled across the melting temperature. The specimen was observed nearly along [001] direction. The lattice fringe of (220) plane was observed during solidification, and this part combined with the other liquid part to make a twist boundary. The angle between the (220) planes of these two crystal grains was close to the rotation angle of the (001) Σ5 twist boundary.