Studies on the Heterostructure of Fe Film on Si Substrate
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Published:2005-01
Issue:
Volume:475-479
Page:3753-3756
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Ge Y.F.1,
Zhang Rong1,
Xiu Xiang Qian1,
Xie Zi Li1,
Gu Shu Lin1,
Shi Yi1,
Zheng You Dou1
Abstract
Fe films have been grown on different oriented Si substrates by metal organic chemical vapor deposition (MOCVD), and then samples are put in the air without any protection for nearly fifteen years. In this paper, using methods such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM), we make a detailed research on the
samples. We identify the composition and structure of the epitaxial films on different oriented substrates and compare the difference both in composition and magnetic properties. Different orientation of the substrates results in different epitaxial film with different characteristic. We also confirm the existence of single crystal iron in the heteroepitaxial film grown on Si (001), and discuss the possible reason why the single crystal iron film still exists without complete oxidation in air for such a long time.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science